Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-20
2007-03-20
Le, Thao X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000, C257SE21680, C365S185040
Reexamination Certificate
active
10532679
ABSTRACT:
A floating gate MOS transistor comprises one or more control gates, an active channel, and at least one floating gate disposed between the control gate(s) and the active channel. First and second non-linear resistances couple the floating gate to first and second control voltage sources respectively, the non-linear resistances forming a voltage divider network which sets the operating voltage of the floating gate.
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O. Naess et al., “Tunable floating-gate low-voltage transconductor,” 2002 IEEE International Symposium on Circuits and Systems. Proceedings (Cat. No. 02CH37353), 22002 IEEE International Symposium on Circuits and Systems, Phoenix-Scottsdale, AZ, USA, May 26-29, 2002, vol. 4, pp. IV-663-IV-666, XP002272572, Piscataway, NJ, USA, IEEE, USA ISBN: 0-7803-7448-7.
Hafiz Mursalin B.
Le Thao X.
Toumaz Technology Limited
Wenderoth , Lind & Ponack, L.L.P.
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