Floating gate MOS transistor charge injection circuit and comput

Details Floating gate MOS transistor charge injection circuit and comput Floating gate MOS transistor charge injection circuit and comput

1997-09-30

1999-08-31

Nelms, David

Static information storage and retrieval

Floating gate

Particular biasing

36518501, 36518503, 36518515, G11C 1604

Patent

active

059462353

ABSTRACT:
The charge injection circuit of this invention comprises at least one pair of floating gate MOS transistors having source and drain terminals which are coupled together and to an injection node, and at least one corresponding pair of generators of substantially step-like voltage signals having an initial value and a final value, and having outputs respectively coupled to the control terminals of said transistors. The signal generators are such that the initial value of a first of the signals is substantially the equal of the final value of a second of the signals, and that the final value of the first signal is substantially the equal of the initial value of the second signal.

REFERENCES:
patent: 4661929 (1987-04-01), Aoki et al.
patent: 5289401 (1994-02-01), Shima
patent: 5592418 (1997-01-01), Sabatini
Kramer et al., "Flash-Based Programmable Nonlinear Capacitor for Switched-Capacitor Implementations of Neural Networks," in Technical Digest of the International Electron Devices Meeting, IEEE, San Francisco, Dec. 11-14, 1994, pp. 449-452.

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