Floating gate memory device with facing asperities on floating a

Details Floating gate memory device with facing asperities on floating a Floating gate memory device with facing asperities on floating a

1983-07-06

1988-07-12

Larkins, William D.

357 59, H01L 2978, G11C 1140

Patent

active

047573600

ABSTRACT:
A floating gate memory device includes a substrate of semiconductor material having on a surface thereof a layer of insulating material. On the insulating layer is a floating gate of conductive polycrystalline silicon with the floating gate having a textured outer surface and relatively smoother sidewalls. A second layer of insulating material extends over the outer surface and sidewalls of the floating gate. The portion of the second insulating material over the outer surface of the floating gate has a textured surface and is thinner than the portions of the second insulating layer over the sidewalls of the floating gate. A control gate is over the second insulating layer and extends over the outer surface and sidewalls of the floating gate. The control gate is of conductive polycrystalline silicon and has an inner surface portion over the textured outer surface of the control gate which is textured and has undulations which substantially follow the undulations of the textured surface of the floating gate.

REFERENCES:
patent: 4099196 (1978-04-01), Simko
patent: 4119995 (1978-10-01), Simko
patent: 4274012 (1981-06-01), Simko
patent: 4314265 (1982-02-01), Simko
Han-Sheng Lee, A New Approach for Floating Gate MOS Nonvolatile Memory, Oct., 1, 1977, Appl. Physics Ltrs. vol. 31, No. 7, pp. 475-476.

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