Self-aligned heterojunction transistor

Details Self-aligned heterojunction transistor Self-aligned heterojunction transistor

1987-04-23

1989-10-03

James, Andrew J.

Gas separation

357 34, 357 63, 357 91, H01L 2972

Patent

active

048720402

ABSTRACT:
A vertical heterojunction equal area transistor and starting structure therefor is provided in which three epitaxial layers structure with wide band gap external layers and narrower band gap center layer is provided with peripheral impurity concentrations such that the area around the wide gap electrodes is high resistivity and the area around the center narrower gap region is high conductivity. A bipolar transistor of GaAs-Ge-GaAs is described.

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