Floating-gate memory cell and memory device and electronic...

Details Floating-gate memory cell and memory device and electronic... Floating-gate memory cell and memory device and electronic...

2011-03-01

2011-03-01

Landau, Matthew C (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257SE29300, C438S429000

Reexamination Certificate

active

07898017

ABSTRACT:
A floating-gate memory cell has a tunnel dielectric layer that overlies a silicon-containing semiconductor substrate and that is adjacent a trench formed in the semiconductor substrate. A floating-gate layer, having at least one silicon-containing layer, overlies the tunnel dielectric layer. An intergate dielectric layer overlies the floating-gate layer, and a control gate layer overlies the intergate dielectric layer. A first silicon oxide layer is formed on an edge of the at least one silicon-containing layer of the floating-gate layer and extends across a first portion of an edge of the tunnel dielectric layer. A second silicon oxide layer is formed on a sidewall of the trench and extends across a second portion of the edge of the tunnel dielectric layer.

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