Static information storage and retrieval – Magnetic bubbles – Guide structure
Patent
1990-01-23
1990-12-18
Hille, Rolf
Static information storage and retrieval
Magnetic bubbles
Guide structure
357 55, 365185, H01L 2968, H01L 2906, G11C 1134
Patent
active
049790048
ABSTRACT:
One embodiment of the invention provides an EPROM and a method of fabricating an EPROM with enhanced capacitive coupling. Trenched memory cells each comprise a pleat-shaped floating gate with the control gate nested in a fold of the floating gate to increase the coupling ratio with the control gate. As a result higher programming speed and improved cell density may be obtained for a given programming voltage. Formation of bit lines along trench walls results in lower bit line resistivity for a given cell density.
REFERENCES:
patent: 4163988 (1979-08-01), Yeh et al.
patent: 4169291 (1979-09-01), Rossler
patent: 4199772 (1980-04-01), Kenji et al.
patent: 4222062 (1980-09-01), Trotter et al.
patent: 4222063 (1980-09-01), Rodgers
patent: 4364074 (1982-12-01), Garnache et al.
patent: 4542396 (1985-09-01), Schutten et al.
patent: 4590504 (1986-05-01), Guterman
patent: 4698900 (1987-10-01), Esquivel
patent: 4713677 (1987-12-01), Tigelaar et al.
patent: 4763177 (1988-08-01), Paterson
patent: 4774556 (1988-09-01), Fujii et al.
patent: 4814840 (1989-03-01), Kameda
IBM Technical Disclosure Bulletin, vol. 24, #3, pp. 1331-1333, by Tsang.
Agerico L. Esquivel et al., "A Novel Trench-Isolated Buried N+ Famos Transistor Suitable for High Density EPROM's", IEEE vol. 8, No. 4, Apr. 87, pp. 146-147.
Esquivel Agerico L.
Mitchell Allan T.
Tigelaar Howard L.
Braden Stanton C.
Hille Rolf
Limanek Robert P.
Romano Ferdinand M.
Sharp Melvin
LandOfFree
Floating gate memory cell and device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Floating gate memory cell and device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Floating gate memory cell and device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1428862