Floating gate having multiple charge storing layers, method...

Details Floating gate having multiple charge storing layers, method... Floating gate having multiple charge storing layers, method...

2007-10-16

2010-06-29

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S321000

Reexamination Certificate

active

07745874

ABSTRACT:
Provided is a floating gate having multiple charge storing layers, a non-volatile memory device using the same, and a method of fabricating the floating gate and the non-volatile memory device, in which the multiple charge storing layers using metal nano-crystals of nano size is formed to thereby enhance a charge storage capacity of the memory device. The floating gate includes a polymer electrolytic film which is deposited on a tunneling oxide film, and is formed of at least one stage in which at least one thin film is deposited on each stage, and at least one metal nano-crystal film which is self-assembled on the upper surface of each stage of the polymer electrolytic film and on which a number of metal nano-crystals for trapping charges are deposited. The floating gate is made by self-assembling the metal nano-crystals on the polymer electrolytic film, and thus can be fabricated without undergoing a heat treatment process at high temperature.

REFERENCES:
patent: 5403680 (1995-04-01), Otagawa et al.
patent: 6444545 (2002-09-01), Sadd et al.
patent: 2007/0102750 (2007-05-01), Kim et al.

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