Floating gate field effect transistors for chemical and/or...

Details Floating gate field effect transistors for chemical and/or... Floating gate field effect transistors for chemical and/or...

2005-01-11

2008-12-09

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Metallic housing or support

C257S414000, C438S048000, C438S049000, C438S056000, C438S257000

Reexamination Certificate

active

07462512

ABSTRACT:
Specific ionic interactions with a sensing material that is electrically coupled with the floating gate of a floating gate-based ion sensitive field effect transistor (FGISFET) may be used to sense a target material. For example, an FGISFET can use (e.g., previously demonstrated) ionic interaction-based sensing techniques with the floating gate of floating gate field effect transistors. The floating gate can serves as a probe and an interface to convert chemical and/or biological signals to electrical signals, which can be measured by monitoring the change in the device's threshold voltage, VT.

REFERENCES:
Bausells et al. “Ion-sensitive transistors fabricated in a commercial CMOS technology”, Sensors and Actuators B vol. 57, (1999) pp. 56-62.
Janata, J. “Potentiometric Microsensors”, Chemical Reviews vol. 90 (1990) pp. 691-703.

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