Floating gate field-effect transistor

Details Floating gate field-effect transistor Floating gate field-effect transistor

2005-07-05

2005-07-05

Booth, Richard A. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S261000

Reexamination Certificate

active

06914292

ABSTRACT:
A floating gate field-effect transistor (400), which is preferably used as a memory cell, has, above or below a floating gate region (407), an electrically insulating layer sequence (408) having a lower layer (409) having a first relative permittivity, having a middle layer (410) having a second relative permittivity, and having an upper layer (411) having a third relative permittivity, the second relative permittivity being greater than the first relative permittivity and greater than the third relative permittivity.

REFERENCES:
patent: 4630086 (1986-12-01), Sato et al.
patent: 5703388 (1997-12-01), Wang et al.
patent: 5789297 (1998-08-01), Wang et al.
patent: 5836772 (1998-11-01), Chang et al.
patent: 6008091 (1999-12-01), Gregor et al.
patent: 6121654 (2000-09-01), Likharev
patent: 6717204 (2004-04-01), Furuhata et al.
patent: 2001/0018254 (2001-08-01), Yamamoto
patent: 2002/0137288 (2002-09-01), Nomoto et al.
patent: 2002/0190311 (2002-12-01), Blomme et al.
patent: 196 30 984 (1998-02-01), None
patent: 196 38 969 (1998-04-01), None
patent: 19823768 (1999-12-01), None
patent: 199 03 598 (2000-08-01), None
patent: 1124262 (2001-08-01), None
patent: WO 99/19913 (1999-04-01), None
patent: WO 00/45441 (2000-08-01), None
patent: WO 00/75997 (2000-12-01), None

Affiliated with

Also associated with

Rating

Floating gate field-effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Floating gate field-effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Floating gate field-effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3419278