Floating gate FET with hydrogen barrier shield

Details Floating gate FET with hydrogen barrier shield Floating gate FET with hydrogen barrier shield

1991-07-09

1995-10-10

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257630, 257640, 257645, H01L 27115

Patent

active

054573351

ABSTRACT:
A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.

REFERENCES:
patent: 4019197 (1977-04-01), Lohstroh et al.
patent: 4866493 (1989-09-01), Arima et al.
patent: 4942450 (1990-07-01), Iwashita et al.
patent: 4970565 (1990-11-01), Wu et al.

Affiliated with

Also associated with

Rating

Floating gate FET with hydrogen barrier shield does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Floating gate FET with hydrogen barrier shield, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Floating gate FET with hydrogen barrier shield will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2312223