Floating gate device with graphite floating gate

Details Floating gate device with graphite floating gate Floating gate device with graphite floating gate

2011-07-12

2011-07-12

Yoha, Connie C (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S185010, C365S185020, C365S185260

Reexamination Certificate

active

07978504

ABSTRACT:
One or more embodiments relate to a memory device, comprising: a substrate; a charge storage layer disposed over the substrate; and a control gate disposed over the charge storage layer, wherein the charge storage layer or the control gate layer comprises a carbon allotrope.

REFERENCES:
patent: 6245417 (2001-06-01), Huang
patent: 6692327 (2004-02-01), Deguchi et al.
patent: 6841448 (2005-01-01), Gehring et al.
patent: 6933531 (2005-08-01), Ishikawa et al.
patent: 7285429 (2007-10-01), Shigaki et al.
patent: 7538378 (2009-05-01), Jung
patent: 2005/0056877 (2005-03-01), Rueckes et al.
patent: 2006/0220094 (2006-10-01), Lojek
patent: 2007/0014151 (2007-01-01), Zhang et al.
patent: 2008/0277719 (2008-11-01), Choi et al.
patent: 2009/0184389 (2009-07-01), Bertin et al.
patent: 102004023301 (2005-12-01), None
patent: 102004049452 (2006-04-01), None
patent: 2005033358 (2005-04-01), None
patent: 2006/000175 (2006-01-01), None
Chen She, Jing Pu, Ming Fu Li, Byung Jin Cho; Improvement of Retention and Vth Window in Flash Memory Device through Optimization of Floating Gate Doping; ICMTD-2007; pp. 99-101.
Yanjun Ma, Rui Deng, Bin Wang, Andy Horch, Ron Paulsen; Data Retention Reliability of P+ Poly Floating Gate Memories in Logic CMOS Processes;ICMTD-2007; pp. 117-120.
G. Aichmayr, A. Avellan, G.S. Duesberg, F. Kreupl, S. Kudelka, M. Liebau, A. Orth, A. Saenger, J. Schumann, O. Storbeck; Carbon / high-k Trench Capacitor for the 40nm DRAM Generation; 2007 Symposium on VLSI Technology Digest of Technical Papers; pp. 186-187.
Robert Seidel, Georg S. Guesberg, Eugen Unger, Andrew P. Graham, Maik Liebau, Franz Kreupl; Chemical Vapor Deposition Growth of Single-Walled Carbon Nanotubes at 600 ° C and a Simple Growth Model; J. Phys. Chem B; American Chemical Society; 10.1021/jp037063z; pp, received: Oct. 10, 2003, Final form:Dec. 3, 2003.
Seong-Wan Ryu, Xing-Jiu Huang, and Yang-Kyu Choi Vertically standing carbon nanotubes as charge storage nodes for ultimately scaled nonvolatile memory application Applied Physics Letters, Aug. 7, 2007, vol. 91, 063110, 3 pages.

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