Floating-body dynamic random access memory with purge line

Static information storage and retrieval – Systems using particular element – Semiconductive

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S390000

Reexamination Certificate

active

07002842

ABSTRACT:
Embodiments relate to a Floating Body Dynamic Random Access Memory (FBDRAM). The FBDRAM utilizes a purge line to reset a FBDRAM cell, prior to writing data to the FBDRAM cell.

REFERENCES:
patent: 2004/0026749 (2004-02-01), Ohsawa
patent: 2004/0042256 (2004-03-01), Forbes
patent: 2004/0123037 (2004-06-01), Gomes et al.
patent: 2005/0063224 (2005-03-01), Fazan et al.
S. Okhonin et al.; A SOI Capacitor-less IT-DRAM Concept; Oct. 2001; pp. 153-154; 2001 IEEE International SOI Conference.
Charles Kuo et al.; A Capacitorless Double-Gate DRAM Cell; Jun. 2002; pp. 345-347; IEEE Electron Device Letters, vol. 23, No. 6.
Takashi Ohsawa et al.; Memory Design Using a One-Transistor Gain Cell on SOI; Nov. 2002; pp. 1510-1522; IEEE Journal of Solid-State Circuits, vol. 37, No. 11.
Takashi Ohsawa et al.; A Memory Using One-Transistor Gain Cell on SOI (FBC) with Performance Suitable for Embedded DRAM's; 2003 Symposium on VLSI Circuits Digest of Technical Papers.
Takashi Ohsawa et al.; ISSCC 2002/ Session 9/ Dram and Ferroelectric Memories/ 9.1.
Wann et al., A Capacitorless DRAM Cell on SOI Substrate, 1993 IEEE, pp. 26.4.1-26.4.4.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Floating-body dynamic random access memory with purge line does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Floating-body dynamic random access memory with purge line, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Floating-body dynamic random access memory with purge line will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3688842

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.