Floating-body dynamic random access memory with purge line

Static information storage and retrieval – Systems using particular element – Semiconductive

Reexamination Certificate

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Details

C365S185260, C257S390000

Reexamination Certificate

active

07057927

ABSTRACT:
Embodiments relate to a Floating Body Dynamic Random Access Memory (FBDRAM). The FBDRAM utilizes a purge line to reset a FBDRAM cell, prior to writing data to the FBDRAM cell.

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