Floating base bipolar ESD devices

Details Floating base bipolar ESD devices Floating base bipolar ESD devices

2007-10-09

2007-10-09

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S361000, C257S370000, C257SE27016, C257SE27017

Reexamination Certificate

active

11015402

ABSTRACT:
The present invention includes a bipolar ESD device for protecting an integrated circuit from ESD damage. The bipolar ESD device includes a collector connected to a terminal of the integrated circuit, a floating base, and a grounded emitter. When an ESD pulse hits the terminal of the integrated circuit, the PN junction between the emitter and the base becomes forward biased. The forward biasing of the emitter-base PN junction in turn causes carriers to be injected into the collector-base junction, triggering the bipolar ESD device to turn on to discharge the ESD pulse. The trigger voltage of the bipolar ESD device is a fraction of a breakdown voltage of the collector-base PN junction and can be modified by adjusting a base length of the bipolar ESD device, a junction depth of the collector, or a dopant concentration in the base.

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patent: 2005/0205937 (2005-09-01), Wang

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