Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip
Reexamination Certificate
2008-07-10
2010-10-05
Clark, Jasmine J (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Flip chip
C257S783000, C257S753000, C257S773000, C257S789000, C257SE23069, C257SE23018, C438S109000
Reexamination Certificate
active
07808113
ABSTRACT:
A semiconductor device assembly (200) includes a workpiece (205) having a surface including a die attach region corresponding to regions under an integrated circuit (IC) die210. The die attach region of workpiece (205) includes non-noble metal surfaces (215) and a plurality of flip chip (PC) pads at pad locations (214). A solder mask layer (207) is on a surface of the workpiece (205) outside the die attach region. The non-noble metal surfaces (215) in the die attach region include an adhesion promoter layer (221), wherein the adhesion promoter layer221is absent from the plurality of PC pads (214). An integrated circuit (IC) die (210) having a plurality of bumps (211) bonded in a flip chip arrangement to the workpiece (205). An underfill material (232) fills a space between the bumped IC die (210) and the workpiece (205).
REFERENCES:
patent: 6586683 (2003-07-01), Arrington et al.
patent: 2002/0189853 (2002-12-01), Hsu
Brady III Wade J.
Clark Jasmine J
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Tung Yingsheng
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