Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip
Reexamination Certificate
2005-01-25
2005-01-25
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Flip chip
C257S786000, C257S691000, C257S210000, C257S207000
Reexamination Certificate
active
06847120
ABSTRACT:
A flip chip semiconductor device has a cell forming layer assigned to macro-cells and input and output cells and a pad forming layer assigned to power supply pads for the macro-cells and input and output cells and signal pads for the input and output cells, and the signal pads are arranged outside of the power supply pads, whereby a package substrate to be assembled with the flip chip semiconductor device is simplified by virtue of the signal lines on a level with the signal pads, because any power supply pad is not an obstacle against the signal lines.
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patent: 5952726 (1999-09-01), Liang
patent: 6097098 (2000-08-01), Ball
patent: 6229099 (2001-05-01), Horiuchi et al.
patent: 6335493 (2002-01-01), Horiuchi et al.
patent: 6388199 (2002-05-01), Jiang et al.
patent: 6410990 (2002-06-01), Taylor et al.
patent: 05-267302 (1993-10-01), None
patent: 2000-100955 (2000-04-01), None
Flynn Nathan J.
Greene Pershelle
NEC Electronics Corporation
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