Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip
Reexamination Certificate
1998-08-04
2002-09-17
Williams, Alexander O. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Flip chip
C257S737000, C257S738000, C257S686000, C257S493000, C257S779000, C341S079000
Reexamination Certificate
active
06452280
ABSTRACT:
TECHNICAL FIELD
The present invention relates to a semiconductor apparatus. In particular, the present invention relates to a semiconductor apparatus in which a flip-chip packaging technique is used and a method for producing the same.
BACKGROUND ART
Recently the semiconductor element has become increasingly integrated, the size of the semiconductor apparatus has become miniaturized and the pitch between the connecting terminals has become narrower. Under these circumstances, the semiconductor apparatus in which the flip-chip packaging technique is used has been developed more and more. Hereinafter, one example of semiconductor apparatus in which the flip-chip packaging technique is used will be explained, referring to the figures.
FIG. 9
is a sectional view showing a semiconductor in which the flip-chip packaging technique is used. An aluminum electrode terminal
102
is formed on the semiconductor element
101
. The area of the semiconductor element other than where the aluminum electrode terminal
102
is formed is covered with an insulating film
103
composed of Si oxide film, Si nitrogen film and the like. On the aluminum electrode terminal
102
, a projected electrode
104
composed of conductive metallic material such as Au or Cu and the like is formed. On the other hand, a desired circuit pattern
106
and an electrode terminal
107
are formed on the principal surface of circuit substrate
105
composed of insulating material such as resin, ceramic or glass and the like. The electrode terminal
107
is connected to the circuit pattern
106
. In flip-chip packaging, the electrode terminal
107
connects electrically with the semiconductor element
101
. A projected electrode
104
is electrically connected with the electrode terminal
107
by the conductive adhesive
108
. The conductive adhesive
108
contains a powder of conductive metallic material such as Ag, Cu or Ni and the like in the resin. The insulating resin
109
is filled in the space between the semiconductor element
101
and the circuit substrate
105
. When the insulating resin
109
is hardened, the semiconductor element
101
and the circuit substrate
105
are bonded by the hardening shrinkage force of the insulating resin
109
, and are attracted powerfully and fixed. Consequently, the mechanical strength of connecting the semiconductor element
101
and the circuit substrate
105
of the semiconductor apparatus is enhanced and a stable fixing can be maintained.
A method for producing the conventional semiconductor apparatus as above-mentioned will be explained referring to
FIG. 10
, which is a flow chart showing the process of producing the semiconductor apparatus. First, a semiconductor element
101
, on which a desired element, a wiring and an insulating film
103
are formed by the normal process of producing the semiconductor, is produced. Then the semiconductor wafer, on which a numerous pieces of semiconductor element
101
are formed, is produced. Then, the quality of the semiconductor element
101
is checked by electrical inspection, that is, by contacting the probe, and the projected electrode
104
is formed. After that, the semiconductor wafer is cut into individual semiconductor elements
101
. On the other hand, in advance, a desired circuit pattern
106
and an electrode terminal
107
are formed using conductive material such as conductive metal, e.g. Au or Cu and the like on the circuit substrate
105
which is composed of the insulating material. Then the semiconductor element
101
is positioned on the circuit substrate
105
with its face down via conductive adhesive
108
so that the predetermined electrode terminal
107
can be connected electrically with the projected electrode
104
. After that, the conductive adhesive
108
is hardened by heat treatment and electrical inspection is conducted to confirm the acting state. After the normal acting state is confirmed, the liquid insulating resin such as epoxy-based resin is filled in the space between the semiconductor element
101
and the circuit substrate
106
by capillary action. After the insulating resin is filled in the space, the insulating resin
109
is hardened by heat treatment and the like, and accordingly the flip-chip packaging is completed.
The semiconductor apparatus in which the flip-chip packaging technique is used was produced according to the above-mentioned production processes.
However, according to the above-mentioned conventional semiconductor apparatus and the method for producing the conventional semiconductor apparatus as shown in
FIG. 11
, irregularity of the flatness accuracy of the surface of the circuit substrate
105
is caused by the warp, swell and the like in some parts of the circuit substrate
105
. Further, there is also the irregularity of the film thickness accuracy of the electrode terminal
107
. Consequently, the protruding surface of the electrode terminal
107
at the side of the circuit substrate in the region of one semiconductor element is not positioned at the horizontal surface respectively, and therefore an irregularity of the position of the protruding surface of the electrode terminal
107
at the side of the circuit substrate in the direction of height of the protruding surface is caused.
Consequently, in mounting the semiconductor element
101
with face down, the size of the space between the semiconductor element
101
and the circuit substrate
105
in the concave portion of the circuit substrate
107
is larger than that of other parts of the circuit substrate
107
. As a result, the conductive adhesive
108
can not reach to the protruding surface of the electrode terminal
107
positioned in the concave portion of the circuit substrate. Consequently, the electrical connection failure is caused.
DISCLOSURE OF INVENTION
It is an object of the present invention to provide a semiconductor apparatus which is stable in quality and has good productivity, and a method for producing the same by connecting electrically the semiconductor element and the circuit substrate more reliably.
In order to achieve the above-mentioned objects, in the semiconductor apparatus of this invention, the flip-chip packaging technique is used for connecting electrically a semiconductor element and a circuit substrate via a projected electrode composed of conductive metallic material formed on an electrode terminal, which is formed on the surface of the semiconductor element where the element is formed, a conductive adhesive and an electrode terminal on the circuit substrate, wherein the individual projected electrode is deformed plastically in the direction of the height so that the distance between a protruding surface of an individual projected electrode and an opposing surface of the individual electrode terminal via the conductive adhesive is unified.
According to the semiconductor apparatus in this invention, the height of the projected electrode is processed appropriately so that the distance between the protruding surface of the individual projected electrode and the opposing surface of the individual electrode terminal via the conductive adhesive is uniform. Consequently, the semiconductor element can be connected electrically with the circuit substrate reliably.
It is preferable that in the semiconductor apparatus, the material of the projected electrode is at least one metallic material selected from the group consisting of Au and Cu.
Furthermore, it is preferable that the distance between the protruding surface of the individual projected electrode and the opposing surface of the individual electrode terminal via the conductive adhesive is in a range of 1 &mgr;m to 10 &mgr;m.
Furthermore, it is preferable that the flip-chip packaging technique is used for connecting the semiconductor element and the circuit substrate via the electrode terminal formed on the semiconductor element where the element is formed, the conductive adhesive and the projected electrode composed of the conductive metallic material formed on the electrode terminal on the circuit substrate.
In the preferred se
Bessho Yoshihiro
Shiraishi Tsukasa
Merchant & Gould P.C.
Williams Alexander O.
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