Flip chip power switch with under bump metallization stack

Details Flip chip power switch with under bump metallization stack Flip chip power switch with under bump metallization stack

2011-08-02

2011-08-02

Pham, Hoai v (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Bump leads

C257S780000, C257SE23020

Reexamination Certificate

active

07989953

ABSTRACT:
A semiconductor package includes a semiconductor substrate a semiconductor substrate having source and drain regions formed therein, an intermediate routing structure to provide electrical interconnects to the source and drain regions, a dielectric layer formed over the intermediate routing structure, and an under-bump-metallization (UBM) stack. The intermediate routing structure includes an outermost conductive layer, and the dielectric layer has an opening positioned over a portion of the intermediate layer routing structure. The UBM stack includes a conductive base layer formed over the dielectric layer and electrically connected to the outermost conductive layer through the opening, and a thick conductive layer formed on the base layer. A conductive bump is positioned on the UBM stack and laterally spaced from the opening.

REFERENCES:
patent: 6713823 (2004-03-01), Nickel
patent: 7727879 (2010-06-01), Lin et al.
patent: 2006/0049483 (2006-03-01), Lin et al.
patent: 2008/0035959 (2008-02-01), Jiang

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