Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2006-08-08
2008-08-05
Pham, Thanh V (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C225S081000, C225S084000, C225S091000, C225S093000, C225S099000, C257S668000, C257S672000, C257S673000, C257S676000
Reexamination Certificate
active
07408204
ABSTRACT:
A packaging structure and method for a light emitting diode is provided. The present invention uses flip-chip and eutectic bonding technology to attach a LED to a thermal and electrical conducting substrate. The flip-chip packaging structure comprises a thermal and electrical conducting substrate having an insulating layer formed in an appropriate area on the top surface of the substrate and a bonding pad formed on top of the insulating layer; and a LED reversed in a flip-chip style and joined to the substrate by eutectic bonding. A first electrode of the LED is eutectically bonded to an appropriate area on the top surface of the substrate via a eutectic layer, while a second electrode of the LED is electrically connected to the bonding pad.
REFERENCES:
patent: 6514782 (2003-02-01), Wierer et al.
patent: 2004/0008744 (2004-01-01), Okazaki et al.
patent: 2004/0027631 (2004-02-01), Nagano et al.
patent: 2006/0055309 (2006-03-01), Ono et al.
patent: 2006/0163683 (2006-07-01), Roth et al.
Huga Optotech Inc.
Pham Thanh V
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