Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-12-27
2010-12-28
Sefer, A. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S780000, C257S781000, C257S778000, C257S783000, C257S738000, C257SE21503, C257SE21002, C438S106000, C438S108000, C438S118000, C438S127000, C438S613000, C228S180220
Reexamination Certificate
active
07859108
ABSTRACT:
A flip chip package includes a substrate and a semiconductor chip. The substrate includes a substrate body, a metal wiring having a terminal part some of which is disposed in the substrate body, a solder resist pattern formed on the substrate body with an opening for exposing the terminal part, and an organic anti-oxidation layer for covering the terminal part. The semiconductor chip has a bump formed through (e.g., penetrates) the organic anti-oxidation layer and is electrically connected to the terminal part. The present invention prevents oxidation of the terminal part and allows easy coupling of a bump of a semiconductor chip and the terminal part of the substrate, since an anti-oxidation layer including an organic matter is formed over a surface of a terminal part including copper which is easily oxidized.
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Cho Il Hwan
Do Eun Hye
Joh Cheol Ho
Kim Ji Eun
Kim Ki Young
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Sefer A.
Woldegeorgis Ermias
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