Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-01-10
2006-01-10
Vigushin, John B. (Department: 2841)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S434000, C257S778000, C257S787000, C438S064000, C438S108000, C438S116000, C438S126000
Reexamination Certificate
active
06984866
ABSTRACT:
Semiconductor devices and methods for making semiconductor devices. The present invention allows a flip chip assembly to be used with an optical semiconductor device. The optical semiconductor flip chip is positioned over a hole in a PCB such that the imaging area of the optical semiconductor flip chip faces the hole. The hole allows the imaging area to be unobstructed by the PCB. Underfill material can be prevented from going into the hole by erecting a barrier on top of the PCB that surrounds the hole.
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Definitions of “charge coupled device” (CCD) found on the Internet through GOOGLE (four sheets).
“ShellOP Process Flow,” Shellcase Wafer Level Packaging, Oct. 2001, 9 pages.
“ShellOP,” downloaded from http://www.shellcase.com/pages/products.asp on Nov. 19, 2002, 3 pages.
“ShellBGA Process Flow,” Shellcase Wafer Level Packaging, Nov. 2001, 12 pages.
“Dual Inline Package,” downloaded from http://www.tpub.com
eets/book14/57g.htm, on Nov. 15, 2002, 5 pages.
“An Innovative Approach to Wafer-Level MEMS packaging,” downloaded from: http://solidstate.articles.printthis.clickability.com on Nov. 19, 2002, 4 pages.
“Packaging Techniques,” downloaded from: http://www.tpub.com
eets/book14/57f.htm on Nov. 15, 2002.
Mostafazadeh Shahram
Penry Matthew D.
Smith Joseph O.
Beyer Weaver & Thomas
National Semiconductor Corporation
Vigushin John B.
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