Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip
Patent
1997-02-21
1999-03-02
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Flip chip
257762, 257780, 257772, 361743, 361764, 361783, H01L 23488, H01L 2350, H05K 118
Patent
active
058775609
ABSTRACT:
A monolithic flip chip microwave integrated circuit module formed using titanium coated copper circuitry and a processing method. A dam is formed on a substrate by forming a thin protective layer such as titanium or other metal on a copper layer formed on a surface of the substrate to which a monolithic microwave integrated circuit is to be attached. The protective layer is oxidized upon exposure to air. Vias or openings are then formed in the oxidized protective layer. Solder is disposed in the openings in the oxidized protective layer, and is confined to the openings while solder is reflowed to attach the integrated circuit to the substrate. The oxidized protective layer serves a dual function that provides both a solder dam and a protective coating for the underlying copper circuitry. Copper surfaces not covered by the oxidized protective layer may be environmentally protected by depositing a thin layer containing electroless plated nickel and electroless plated gold.
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Li Kuo-Hsin
Wen Cheng P.
Wong Wah S.
Alkov Leonard A.
Jackson, Jr. Jerome
Lenzen, Jr. Glen H.
Raytheon Company
Schubert William C.
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