Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2006-06-20
2006-06-20
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S081000, C257S091000, C257S095000
Reexamination Certificate
active
07064356
ABSTRACT:
A flip chip light emitting diode (12) includes a light-transmissive substrate (10) with a base semiconducting layer (40) disposed thereupon. A conductive mesh (18) is disposed on the base semiconducting layer (40) and is in electrically conductive contact therewith. Light-emitting micromesas (30) are disposed in openings (20) of the conductive mesh (18). Each light emitting micromesa (30) has a topmost layer (46) of a second conductivity type that is opposite the first conductivity type. A first conductivity type electrode (14) is disposed on the base semiconducting layer (40) and is in electrical communication with the electrically conductive mesh (18). An insulating layer (60) is disposed over the electrically conductive mesh (18). A second conductivity type electrode layer (24) is disposed over the insulating layer (60) and the light-emitting micromesas (30). the insulating layer (60) insulates the second conductivity type electrode layer (24) from the electrically conductive mesh (18).
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Eliashevich Ivan
Shelton Bryan S.
Stefanov Emil P.
Venugopalan Hari S.
GELcore LLC
Ho Tu-Tu
LandOfFree
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