Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2006-11-28
2006-11-28
Dickey, Thomas L. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S079000
Reexamination Certificate
active
07141828
ABSTRACT:
A p-type contact (30) is disclosed for flip chip bonding and electrically contacting a p-type group III-nitride layer (28) of a group III-nitride flip chip light emitting diode die (10) with a bonding pad (60). A first palladium layer (42) is disposed on the p-type group III-nitride layer (28). The first palladium layer (42) is diffused through a native oxide of the p-type group III-nitride layer (28) to make electrical contact with the p-type group III-nitride layer (28). A reflective silver layer (44) is disposed on the first palladium layer (42). A second palladium layer (46) is disposed on the silver layer (44). A bonding stack (48) including at least two layers (50, 52, 54) is disposed on the second palladium layer (46). The bonding stack (48) is adapted for flip chip bonding the p-type layer (28) to the bonding pad (60).
REFERENCES:
patent: 4648095 (1987-03-01), Iwasaki et al.
patent: 5358899 (1994-10-01), Fleischman et al.
patent: 6194743 (2001-02-01), Kondoh et al.
patent: 6239490 (2001-05-01), Yamada et al.
patent: 6445011 (2002-09-01), Hirano et al.
patent: 6486499 (2002-11-01), Krames et al.
patent: 6521914 (2003-02-01), Krames et al.
patent: 2002/0047131 (2002-04-01), Shen et al.
patent: 2002/0070386 (2002-06-01), Krames et al.
patent: 2002/0123164 (2002-09-01), Slater et al.
patent: 2003/0015721 (2003-01-01), Slater et al.
patent: 2003/0052328 (2003-03-01), Uemura
patent: 0926744 (1999-06-01), None
patent: 1168460 (2002-01-01), None
patent: 1294028 (2003-03-01), None
patent: WO 01/47036 (2001-06-01), None
patent: WO 01/47038 (2001-06-01), None
patent: WO 02/067340 (2002-08-01), None
“Reliability and Failure of Electronic Materials and Devices”, Milton Ohring, Environmental Damage to Electronic Products.
InxGa1-xN/AlyGa1-yN violet light emitting diodes with reflective p-contacts for high single sided light extraction, Mensz et al., Electronics Letter, Nov. 20, 1997, vol. 33, No. 24.
Written Opinion of the International Searching Authority, from International Appl. No. PCT/US2004/008514, 11 pages, (all noted references previously cited and provided), mailed Oct. 6, 2005.
Dickey Thomas L.
Fay Sharpe Fagan Minnich & McKee LLP
GELcore LLC
LandOfFree
Flip-chip light emitting diode with a thermally stable... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Flip-chip light emitting diode with a thermally stable..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flip-chip light emitting diode with a thermally stable... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3656949