Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-09-03
2011-11-01
Thai, Luan C (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000, C257S778000, C257S779000, C257S780000, C257SE23023, C257SE23021
Reexamination Certificate
active
08048793
ABSTRACT:
Disclosed is a method for manufacturing a flip chip, in which a gold typically used in a flip chip manufacturing is adhered by conductive adhesives, wherein the method comprises steps of depositing a metal seed layer on a substrate; applying and patterning a photoresist or a dry film; forming a gold bump by electroplating; patterning the seed layer; forming an insulating layer on the seed layer and upper end of the gold bump; and patterning an insulating layer. Accordingly, it is possible to manufacture a flip chip, in which electrical function between bumps can be evaluated, with less cost.
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Notice to File a Response in Korean Application No. 10-2007-0089905.
Jung Seung Boo
Kim Jong Woong
Edwards Angell Palmer & & Dodge LLP
Kim Kongsik
Sungkyunkwan University Foundation for Corporate Collaboration
Thai Luan C
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