Flip chip FET device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S203000, C257S737000, C257S738000, C257S773000, C257S778000, C257SE23015, C257SE23021

Reexamination Certificate

active

11202461

ABSTRACT:
In accordance with one embodiment of the invention, a semiconductor device includes conductive pad areas, and each conductive pad area is electrically connected to a plurality of metal traces which are in turn each connected to diffusions. A conductive contact element such as a solder bump or via can be attached to each conductive pad area such that the contact elements are arranged in a repeating pattern having a first pitch. The semiconductor device can also include translation traces, and each translation trace can be electrically connected to two or more of the conductive contact elements. Each translation trace can have a interconnect element attached thereto. The interconnect elements can be arranged in a repeating pattern having a second pitch substantially greater than the first pitch.

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