Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Patent
1997-01-16
2000-08-29
Williams, Alexander O.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
257738, 257784, 257758, 257700, 257751, 257762, 257766, 257772, H01L 23528, H01L 2348, H01L 2352, H01L 2940
Patent
active
061113174
ABSTRACT:
A first insulating film is formed on an integrated circuit chip on which an I/O pad is formed. A first opening portion is formed above the I/O pad. A conductive layer and a barrier metal layer which are electrically connected to the I/O pad through the first opening portion are stacked on the first insulating film. The conductive layer and the barrier metal layer are patterned by a single mask. A second insulating film is formed on the resultant structure. A second opening portion is formed in the second insulating film at a position different from that of the first opening portion. A solder bump or metal pad is formed on the barrier metal layer in the second opening portion. The position of the solder bump or metal pad is defined by the second opening portion.
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Doi Kazuhide
Hirano Naohiko
Hiruta Yoichi
Hosomi Eiichi
Okada Takashi
Kabushiki Kaisha Toshiba
Williams Alexander O.
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