Flip chip C4 extension structure and process

Details Flip chip C4 extension structure and process Flip chip C4 extension structure and process

2005-10-18

2005-10-18

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S108000, C438S614000, C438S615000, C438S616000, C228S119000, C228S155000, C228S175000, C228S176000

Reexamination Certificate

active

06955982

ABSTRACT:
An electrical structure, and associated method of fabrication, for reducing thermally induced strain in a structure that couples a first conductive body of a first substrate to a second conductive body of a second substrate (e.g., a chip to a chip carrier; a chip carrier to a circuit card). The melting point of the first conductive body exceeds the melting point of the second conductive body. The second conductive body may include eutectic lead-tin alloy, while the first conductive body may include non-eutectic lead-tin alloy. A portion of the first conductive body is coated with, or volumetrically surrounded by, a material that is nonsolderable and nonconductive. The first and second conductive bodies are coupled mechanically and electrically by surface adhesion at an uncoated portion of the first conductive body, by application of a temperature that lies between the melting points of the first and second conductive bodies.

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