Semiconductor device manufacturing: process – Making passive device – Planar capacitor
Reexamination Certificate
2011-06-21
2011-06-21
Le, Thao X (Department: 2892)
Semiconductor device manufacturing: process
Making passive device
Planar capacitor
C438S396000, C257SE21008, C257SE21009, C257SE21011
Reexamination Certificate
active
07964470
ABSTRACT:
A method for forming a metal-insulator-metal (MIM) capacitor includes forming a capacitor bottom plate and a metal interconnect feature on a substrate. A dielectric layer having a predetermined thickness is then formed. The dielectric layer has a first portion overlying the capacitor bottom plate and a second portion overlying the metal interconnect feature. The dielectric layer is processed to adjust the thickness of the first portion of the dielectric layer relative the thickness of the second portion of the dielectric layer. Processing can include etching the first portion of the dielectric layer or adding dielectric material to the second portion of the dielectric layer. A capacitor top plate is formed over the first portion of the dielectric layer to complete the MIM structure.
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Horng Shean-Ren
Hou Kuo-Nan
Lai Feng-Liang
Jones Eric W
Le Thao X
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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