Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – On insulating carrier other than a printed circuit board
Reexamination Certificate
2007-10-26
2009-12-15
Williams, Alexander O (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
On insulating carrier other than a printed circuit board
C257SE23174, C257SE23007, C257SE23077, C257SE23194, C257SE23008, C257SE23069, C257SE23173, C257S701000, C257S758000, C257S759000, C257S703000, C257S778000, C257S700000, C361S760000, C361S748000
Reexamination Certificate
active
07633142
ABSTRACT:
An IC package is disclosed that comprises a core region disposed between upper and lower build-up layer regions. In one embodiment, the core region comprises a low modulus material. In an alternative embodiment the core region comprises a medium modulus material. In an alternative embodiment, the core material is selected based upon considerations such as it modulus, its coefficient of thermal expansion, and/or the resulting total accumulated strain. In an alternative embodiment, boundaries with respect to the softness of the core material are established be considering the reflective density in opposing conductive build-up layers above and below the core region.
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Brusso Patricia A.
Cadena Ruben
McCormick Carolyn R.
Modi Mitul B.
Subramanian Sankara J.
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Williams Alexander O
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