Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-08-18
2009-12-29
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S040000, C257S072000, C257SE31041
Reexamination Certificate
active
07638802
ABSTRACT:
A flat panel display includes a plurality of gate lines; a plurality of data lines insulated with the gate lines, the data lines defining a pixel by intersecting the gate line; and a thin film transistor (TFT) being provided in each of the pixels and containing an organic semiconductor layer, wherein a distance between the adjacent TFTs in a direction extended to the gate line is longer than a width of the pixel in a direction extended to the gate line.
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Machine Translation of JP 05-134629.
Machine Translation of JP 09-061812.
Machine Translation of JP 09-068724.
Lee Yong-uk
Song Keun-kyu
Ho Anthony
Innovation Counsel LLP
Jackson, Jr. Jerome
Samsung Electronics Co,. Ltd.
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