Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-05-24
2005-05-24
Tran, Thien F (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S088000, C257S098000, C257S347000
Reexamination Certificate
active
06897478
ABSTRACT:
A flat panel display includes a conductive layer having a transparent conductive material and a metallic material. The conductive layer has a gradual concentration gradient and is used as a pixel electrode and a black matrix at the same time. A fabrication method of the flat panel display includes forming a thin film transistor equipped with source/drain electrodes on a substrate, forming an insulation layer on the substrate having the thin film transistor, forming a via hole which exposes one of the source/drain electrodes, and forming an anti-reflection layer connected to the exposed one of the source/drain electrode. The anti-reflection layer functions as a pixel electrode and a black matrix of the flat panel display.
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U.S. Appl. No. 10/288,509, filed Nov. 6, 2002, Shin et al.
Koo Jae-Bon
Shin Dong-Chan
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