Flat panel display device with anti-reflection layer having...

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

Reexamination Certificate

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C257S072000, C257S088000, C257S098000, C257S347000

Reexamination Certificate

active

06897478

ABSTRACT:
A flat panel display includes a conductive layer having a transparent conductive material and a metallic material. The conductive layer has a gradual concentration gradient and is used as a pixel electrode and a black matrix at the same time. A fabrication method of the flat panel display includes forming a thin film transistor equipped with source/drain electrodes on a substrate, forming an insulation layer on the substrate having the thin film transistor, forming a via hole which exposes one of the source/drain electrodes, and forming an anti-reflection layer connected to the exposed one of the source/drain electrode. The anti-reflection layer functions as a pixel electrode and a black matrix of the flat panel display.

REFERENCES:
patent: 5633195 (1997-05-01), Guthrie et al.
patent: 5990555 (1999-11-01), Ohori et al.
patent: 6005295 (1999-12-01), Hattori
patent: 6075317 (2000-06-01), Keyser et al.
patent: 20010006255 (2001-07-01), Kwon et al.
U.S. Appl. No. 10/288,509, filed Nov. 6, 2002, Shin et al.

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