Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-05-24
2005-05-24
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S908000, C438S487000
Reexamination Certificate
active
06897100
ABSTRACT:
A multi-chamber system for providing a process of a high degree of cleanliness in fabricating semiconductor devices such as semiconductor integrated circuits. The system comprises a plurality of vacuum apparatus (e.g., a film formation apparatus, an etching apparatus, a thermal processing apparatus, and a preliminary chamber) for fabrication of semiconductor devices. At least one of these vacuum apparatuses is a laser.
REFERENCES:
patent: 4113514 (1978-09-01), Pankove et al.
patent: 4151007 (1979-04-01), Levinstein et al.
patent: 4151058 (1979-04-01), Kaplan
patent: 4226898 (1980-10-01), Ovshinsky
patent: 4313783 (1982-02-01), Davies et al.
patent: 4322253 (1982-03-01), Pankove
patent: 4331709 (1982-05-01), Risch et al.
patent: 4370175 (1983-01-01), Levatter
patent: 4388145 (1983-06-01), Hawkins et al.
patent: 4398343 (1983-08-01), Tamazaki
patent: 4402762 (1983-09-01), John et al.
patent: 4405435 (1983-09-01), Tateishi et al.
patent: 4475027 (1984-10-01), Pressley
patent: 4482395 (1984-11-01), Hiramoto
patent: 4498416 (1985-02-01), Bouchaib
patent: 4503807 (1985-03-01), Nakayama et al.
patent: 4505950 (1985-03-01), Yamazaki
patent: 4523370 (1985-06-01), Sullivan et al.
patent: 4552595 (1985-11-01), Hoga
patent: 4557036 (1985-12-01), Kyuragi et al.
patent: 4567061 (1986-01-01), Hayashi et al.
patent: 4576851 (1986-03-01), Iwamatsu
patent: 4582720 (1986-04-01), Yamazaki
patent: 4589951 (1986-05-01), Kawamura
patent: 4590091 (1986-05-01), Rogers et al.
patent: 4592306 (1986-06-01), Gallego
patent: 4592799 (1986-06-01), Hayafuji
patent: 4595601 (1986-06-01), Horioka et al.
patent: 4609407 (1986-09-01), Masao et al.
patent: 4640223 (1987-02-01), Dozier
patent: 4663829 (1987-05-01), Hartman et al.
patent: 4675978 (1987-06-01), Swartz
patent: 4694143 (1987-09-01), Nishimura et al.
patent: 4698486 (1987-10-01), Sheets
patent: 4699863 (1987-10-01), Sawatari et al.
patent: 4719123 (1988-01-01), Haku et al.
patent: 4727044 (1988-02-01), Yamazaki
patent: 4800174 (1989-01-01), Ishihara et al.
patent: 4808554 (1989-02-01), Yamazaki
patent: 4843022 (1989-06-01), Yamazaki
patent: 4888305 (1989-12-01), Yamazaki et al.
patent: 4937205 (1990-06-01), Nakayama et al.
patent: 4951601 (1990-08-01), Maydan et al.
patent: 4986213 (1991-01-01), Yamazaki et al.
patent: 4988642 (1991-01-01), Yamazaki
patent: 5028560 (1991-07-01), Tsukamoto et al.
patent: 5043299 (1991-08-01), Chang et al.
patent: 5091334 (1992-02-01), Yamazaki
patent: 5141058 (1992-08-01), Heppner
patent: 5147826 (1992-09-01), Liu et al.
patent: 5171710 (1992-12-01), Yamazaki
patent: 5174881 (1992-12-01), Iwasaki et al.
patent: 5186718 (1993-02-01), Tepman et al.
patent: 5194398 (1993-03-01), Miyachi et al.
patent: 5200017 (1993-04-01), Kawasaki et al.
patent: 5266116 (1993-11-01), Fujioka et al.
patent: 5286296 (1994-02-01), Sato et al.
patent: 5288658 (1994-02-01), Ishihara
patent: 5292393 (1994-03-01), Maydan et al.
patent: 5292675 (1994-03-01), Codama
patent: 5294571 (1994-03-01), Fujishiro et al.
patent: 5294572 (1994-03-01), Granneman et al.
patent: 5294811 (1994-03-01), Aoyama et al.
patent: 5296405 (1994-03-01), Yamazaki et al.
patent: 5298436 (1994-03-01), Radosevich et al.
patent: 5304357 (1994-04-01), Sato et al.
patent: 5308998 (1994-05-01), Yamazaki et al.
patent: 5310410 (1994-05-01), Begin et al.
patent: 5313076 (1994-05-01), Yamazaki et al.
patent: 5314538 (1994-05-01), Maeda et al.
patent: 5314839 (1994-05-01), Mizutani et al.
patent: 5316960 (1994-05-01), Watanabe et al.
patent: 5322807 (1994-06-01), Chen et al.
patent: 5324360 (1994-06-01), Kozuka
patent: 5344522 (1994-09-01), Yagi et al.
patent: 5352291 (1994-10-01), Zhang et al.
patent: 5372958 (1994-12-01), Miyasaka et al.
patent: 5380682 (1995-01-01), Edwards et al.
patent: 5412493 (1995-05-01), Kunii et al.
patent: 5413664 (1995-05-01), Yagi et al.
patent: 5420044 (1995-05-01), Kozuka
patent: 5422287 (1995-06-01), So
patent: 5424244 (1995-06-01), Zhang et al.
patent: 5478780 (1995-12-01), Koerner et al.
patent: 5490896 (1996-02-01), Yagi et al.
patent: 5494494 (1996-02-01), Mizuno et al.
patent: 5534884 (1996-07-01), Mase et al.
patent: 5545571 (1996-08-01), Yamazaki
patent: 5561081 (1996-10-01), Takenouchi et al.
patent: 5578520 (1996-11-01), Zhang et al.
patent: 5581092 (1996-12-01), Takemura
patent: 5595638 (1997-01-01), Konuma et al.
patent: 5608232 (1997-03-01), Yamazaki et al.
patent: 5608251 (1997-03-01), Konuma et al.
patent: 5620095 (1997-04-01), Delmore et al.
patent: 5639698 (1997-06-01), Yamazaki et al.
patent: 5643801 (1997-07-01), Ishihara et al.
patent: 5648276 (1997-07-01), Hara et al.
patent: 5663077 (1997-09-01), Adachi et al.
patent: 5753542 (1998-05-01), Yamazaki et al.
patent: 5804471 (1998-09-01), Yamazaki et al.
patent: 5811327 (1998-09-01), Funai et al.
patent: 5840600 (1998-11-01), Yamazaki et al.
patent: 5849043 (1998-12-01), Zhang et al.
patent: 5858473 (1999-01-01), Yamazaki et al.
patent: 5861337 (1999-01-01), Zhang et al.
patent: 5879969 (1999-03-01), Yamazaki et al.
patent: 5965904 (1999-10-01), Ohtani et al.
patent: 5966594 (1999-10-01), Adachi et al.
patent: 6074901 (2000-06-01), Ohtani et al.
patent: 6177302 (2001-01-01), Yamazaki et al.
patent: 6261877 (2001-07-01), Yamazaki et al.
patent: 6329229 (2001-12-01), Yamazaki et al.
patent: 6482752 (2002-11-01), Yamazaki et al.
patent: 6566175 (2003-05-01), Yamazaki et al.
patent: 0211634 (1987-02-01), None
patent: 53-26584 (1978-03-01), None
patent: 57-194518 (1982-11-01), None
patent: 60-042817 (1985-03-01), None
patent: 60-066471 (1985-04-01), None
patent: 62-54423 (1987-03-01), None
patent: 62-54448 (1987-03-01), None
patent: 62-104117 (1987-05-01), None
patent: 63-160336 (1988-07-01), None
patent: 63-250178 (1988-10-01), None
patent: 63-318125 (1988-12-01), None
patent: 1-76715 (1989-03-01), None
patent: 01-057615 (1989-03-01), None
patent: 64-076737 (1989-03-01), None
patent: 01-128446 (1989-05-01), None
patent: 01-179410 (1989-07-01), None
patent: 2-73623 (1990-03-01), None
patent: 02-081424 (1990-03-01), None
patent: 02-239615 (1990-09-01), None
patent: 2-255292 (1990-10-01), None
patent: 02-257619 (1990-10-01), None
patent: 03-024717 (1991-02-01), None
patent: 03-042868 (1991-02-01), None
patent: 03-82121 (1991-04-01), None
patent: 03-095965 (1991-04-01), None
patent: 03-201538 (1991-09-01), None
patent: 3-286518 (1991-12-01), None
patent: 3-289140 (1991-12-01), None
patent: 03-293719 (1991-12-01), None
patent: 04-063414 (1992-02-01), None
patent: 4-102375 (1992-04-01), None
patent: 04-152624 (1992-05-01), None
patent: 04-206532 (1992-07-01), None
patent: 04-221854 (1992-08-01), None
patent: 04-240733 (1992-08-01), None
patent: 04-251921 (1992-09-01), None
patent: 04-278925 (1992-10-01), None
patent: 04-286367 (1992-10-01), None
patent: 04-286370 (1992-10-01), None
patent: 4-307727 (1992-10-01), None
patent: 04-373178 (1992-12-01), None
patent: 05-021382 (1993-01-01), None
patent: 05-182923 (1993-07-01), None
patent: 05-206063 (1993-08-01), None
patent: 05-243577 (1993-09-01), None
patent: 05-251342 (1993-09-01), None
patent: 05-254984 (1993-10-01), None
patent: 05-259259 (1993-10-01), None
patent: 06-084944 (1994-03-01), None
patent: 07-099321 (1995-04-01), None
Wagner et al., “Formation of p-n Junctions and Silicides in Silicon Using a High Performance Laser Beam Homogenization System”, Applied Surface Science, vol. 43, 1989, pp. 260-263.*
Jhon et al., “Crystallization of Amorphous Silicon by Excimer Laser Annealing With a Line Shape Beam Having a Gaussian Profile”, Jpn. J. Appl. Phys., vol. 33, 1994, pp. L1438-L1441.*
Nikkei Microdevices, Oct. 1, 1989, pp. 34-39.
Silicon Processing for the VLSI Era, vol. 1, pp. 61-65, 1994, Wolf, et al.
Silicon Processing for the VSLI Era, vol. 3, p. 648, 1995, Wolf, et al.
Sekiya et al., “Extended Abstracts (The 41st Spring Meeting, 1994)”, pp. 618, Japan Society of Applied Physics and Related Societies, No. 2.
S. Wolf, “Silicon Processing for the VLSI Era, vol. 1: Process Technolgy” Lattice Press, Jan. 1986, pp. 57-58.
S. Wolf et al., “Silicon Processing for the VLSI Era, vo
Shimada Hiroyuki
Takemura Yasuhiko
Takenouchi Akira
Yamazaki Shunpei
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Wilczewski M.
LandOfFree
Method for processing semiconductor device apparatus for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for processing semiconductor device apparatus for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for processing semiconductor device apparatus for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3440695