Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-09-12
2010-06-08
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S161000, C438S022000, C438S149000, C438S151000, C438S164000, C257S059000, C257S072000, C257SE21561
Reexamination Certificate
active
07732267
ABSTRACT:
A flat panel display device (FPD) and fabricating method thereof are disclosed, which reduce the number of masks during fabrication and prevent electro-chemical corrosion problems. In the FPD, a cell area and a pad area are defined on a substrate. A storage electrode traverses an active layer in parallel to a gate line. Source and drain regions of the active layer in the vicinity of both sides of a gate electrode are not formed below the storage electrode. An insulating interlayer over the substrate has first and second contact holes on the source and drain regions, respectively. A source electrode contacts the source region via a first contact hole and a drain electrode contacts the drain region via a second contact hole to directly contact a pixel electrode. A protective layer is disposed over the substrate including the pixel electrode.
REFERENCES:
patent: 6287899 (2001-09-01), Park et al.
patent: 6955578 (2005-10-01), Park et al.
patent: 7084019 (2006-08-01), Yamazaki et al.
Hong Soon Kwang
Jeoung Hun
Baptiste Wilner Jean
Brinks Hofer Gilson & Lione
LG. Display Co. Ltd.
Smith Matthew
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