Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-01-30
2007-01-30
Smith, Bradley K. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257SE29117, C438S151000, C438S158000, C349S139000, C349S140000
Reexamination Certificate
active
10819382
ABSTRACT:
A flat panel display and fabrication method thereof. The present invention uses four etching processes to define a second conducting layer, a doped semiconductor layer and a semiconductor layer. The first etching process is a wet etching using a first resist layer to etch the second conducting layer. The second etching process is executed with an etchant comprising oxygen to etch the doped semiconductor layer and the semiconductor layer, and the first resist layer undergoes ashing during etching so as to become a second resist layer with a channel pattern. The third etching process is another wet etching, and the second conducting layer is etched again using the second resist layer as the etching mask. The fourth etching process is executed to dry etch the doped semiconductor layer using the second resist layer as the etching mask.
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China Office Action mailed Jun. 2, 2006.
Lai Han-Chung
Liao Ta-Wen
Au Optronics Corp.
Fulk Steven J.
Smith Bradley K.
Thomas Kayden Horstemeyer & Risley
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