Flat interface for a metal-silicon contact barrier film

Details Flat interface for a metal-silicon contact barrier film Flat interface for a metal-silicon contact barrier film

1999-07-01

2000-09-26

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257157, 257764, 257768, H01L 2348

Patent

active

061246395

ABSTRACT:
A method for forming a conductive contact having an atomically flat interface is disclosed. A layer containing cobalt and titanium is deposited on a silicon substrate and the resulting structure annealed in a nitrogen containing atmosphere at about 500.degree. C. to about 700.degree. C. A conductive material is deposited on top of the structure formed on anneal. A flat interface, which prevents diffusion of conductive materials into the underlying silicon substrate is formed. The method can be used to form contacts for very small devices and shallow junctions, such as are required for ULSI shallow junctions.

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