Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2005-07-19
2005-07-19
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S238000, C438S239000, C438S190000, C029S025030
Reexamination Certificate
active
06919240
ABSTRACT:
The present invention relates to a method of manufacturing a flat aluminum electrolytic capacitor comprising a separator impregnated with an electrolytic solution, an anode foil and a cathode foil, a flat capacitor element that has external lead-out terminals connected respectively to the anode foil and the cathode foil, and a flexible casing that houses the capacitor element and is hermetically sealed, said method comprising the steps of encasing the capacitor element in the flexible casing and applying aging treatment before hermetically sealing the casing, and hermetically sealing the flexible casing, and also relates to a flat aluminum electrolytic capacitor comprising a separator impregnated with the electrolytic solution, the anode foil and the cathode foil, the flat capacitor element that has the external lead-out terminals connected respectively to the anode foil and the cathode foil, and the flexible casing that houses the capacitor element and is hermetically sealed, wherein the electrolytic capacitor is subjected to an aging treatment before the capacitor element is encased in the flexible casing which is hermetically sealed.
REFERENCES:
patent: 4603467 (1986-08-01), Kaneko
patent: 55-143024 (1980-11-01), None
patent: 57-1219 (1982-01-01), None
patent: 58-178517 (1983-10-01), None
patent: 60-213016 (1985-10-01), None
patent: 4-223317 (1991-08-01), None
Kamakura Katsuhisa
Kobayashi Yuuichi
Komatsu Akihiko
Makino Yoshiki
Matsuzawa Taketo
Merchant & Gould P.C.
Nelms David
Rubycon Corporation
Tran Long
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