Flash-type nonvolatile semiconductor memory having precise erasi

Details Flash-type nonvolatile semiconductor memory having precise erasi Flash-type nonvolatile semiconductor memory having precise erasi

1993-04-21

1993-12-28

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Erase

G11C 1300

Patent

active

052745996

ABSTRACT:
A flash-type nonvolatile semiconductor memory having a precise erasing level is disclosed. The memory of the present invention includes a plurality of source lines arranged in parallel to bit lines in correspondence with columns of a cell matrix, a plurality of level judging circuits arranged at each bit line and a plurality of source line switches arranged at each source line. In an erasing operation, memory cells are erased so as to not generate over-erased cells, every selected memory cell is simultaneously tested whether or not it has a threshold less than a upper limit of an object range, and only unsufficiently erased memory cells are further erased in a re-erasing step by being controlled with the source line switches.

REFERENCES:
patent: 5065364 (1991-11-01), Atwood et al.

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