Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2005-09-13
2005-09-13
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S230000, C438S585000, C438S669000, C438S696000, C438S710000, C438S761000, C438S778000, C438S798000
Reexamination Certificate
active
06943119
ABSTRACT:
In accordance with the objectives of the invention a new Method and recipe is provided for etching of stacked layers of polysilicon. The invention provides for an added flash step after the conventional Overall Etch (OE).
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Fourson George
Garcia Joannie Adelle
Taiwan Semiconductor Manufacturing Co. Ltd.
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