Flash memory with UV opaque passivation layer

Details Flash memory with UV opaque passivation layer Flash memory with UV opaque passivation layer

2005-02-01

2005-02-01

Chen, Jack (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S257000

Reexamination Certificate

active

06849896

ABSTRACT:
A method for making a flash memory having a passivation layer that is not transparent to ultraviolet light. The method forming a semiconductor that includes flash memory cell having floating gate, then forming a the substrate. Process induced charge that has accumulated on the flash cell floating gate is then neutralized and a passivation layer, which is no transparent to ultraviolet light, is formed on the conductive layer.

REFERENCES:
patent: 5010024 (1991-04-01), Allen et al.
patent: 5138573 (1992-08-01), Jeuch
patent: 5519246 (1996-05-01), Shirota et al.
patent: 5888836 (1999-03-01), Ghio et al.
patent: 04-078173 (1992-03-01), None

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