Flash memory with reduced source resistance and fabrication...

Details Flash memory with reduced source resistance and fabrication... Flash memory with reduced source resistance and fabrication...

2006-06-06

2006-06-06

McPherson, John A. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S311000

Reexamination Certificate

active

07056647

ABSTRACT:
A flash memory device having a reduced source resistance and a fabrication method thereof are disclosed. An example flash memory includes a cell region including a gate, a source line, a drain contact, and a cell trench area for device isolation on a silicon substrate. The example flash memory also includes a peripheral region positioned around the cell region and including a subsidiary circuit and a peripheral trench area for device isolation on the silicon substrate, wherein the cell trench area of the cell region is shallower than the peripheral trench area of the peripheral region.

REFERENCES:
patent: 5696019 (1997-12-01), Chang
patent: 6153494 (2000-11-01), Hsieh et al.
patent: 6436765 (2002-08-01), Liou et al.
patent: 6596608 (2003-07-01), Saito
patent: 2002-115175 (2002-04-01), None

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