Flash memory with recessed floating gate

Details Flash memory with recessed floating gate Flash memory with recessed floating gate

2005-08-31

2008-03-11

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S068000, C257S288000, C257SE21422, C257SE21545, C257SE21646

Reexamination Certificate

active

07342272

ABSTRACT:
A flash memory device where the floating gate of the flash memory is defined by a recessed access device. The use of a recessed access device results in a longer channel length with less loss of device density. The floating gate can also be elevated above the substrate a selected amount so as to achieve a desirable coupling between the substrate, the floating gate and the control gate incorporating the flash cell.

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