Flash memory with protruded floating gate

Details Flash memory with protruded floating gate Flash memory with protruded floating gate

2005-06-21

2005-06-21

Dang, Phuc T. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S395000

Reexamination Certificate

active

06909140

ABSTRACT:
A method of forming a flash memory with a protruded floating gate. A substrate is provided. An isolation area and a plurality of patterned conductive layers are sequentially formed on the substrate. The isolation area protrudes from the upper surface of the substrate to isolate the patterned conductive layers. A photo resist layer is formed on the patterned conductive layer. The present invention also provides a flash memory with a protruded floating gate comprised a substrate, a plurality of protruded floating gates, an insulator, and a control gate.

REFERENCES:
patent: 6171909 (2001-01-01), Ding et al.
patent: 6528844 (2003-03-01), Hopper et al.
patent: 6555434 (2003-04-01), Koh

Affiliated with

Also associated with

Rating

Flash memory with protruded floating gate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Flash memory with protruded floating gate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory with protruded floating gate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3489463