Flash memory with high-K dielectric material between...

Details Flash memory with high-K dielectric material between... Flash memory with high-K dielectric material between...

2003-09-09

2008-08-19

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000, C257S321000, C257SE21681, C257SE21682, C438S257000, C438S263000

Reexamination Certificate

active

07414281

ABSTRACT:
A flash memory cell and a method of forming the same are described. The flash memory cell may include a substrate having a source and a drain, a gate element, and a dielectric layer between the substrate and the gate element. The dielectric layer includes a dielectric material having a dielectric constant that is greater than that of silicon dioxide.

REFERENCES:
patent: 6143606 (2000-11-01), Wang et al.
patent: 6348380 (2002-02-01), Weimer et al.
patent: 6617639 (2003-09-01), Wang et al.
patent: 6693321 (2004-02-01), Zheng et al.
patent: 6713810 (2004-03-01), Bhattacharyya
patent: 6750502 (2004-06-01), Sandhu et al.
patent: 6784480 (2004-08-01), Bhattacharyya
patent: 6803275 (2004-10-01), Park et al.
patent: 6872972 (2005-03-01), Huang et al.
http://www.semiconductorglossary.com/default.asp?SearchedField=Yes&SearchTerm=silicon+dioxide.

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