Flash memory with buried bit lines

Details Flash memory with buried bit lines Flash memory with buried bit lines

2007-10-30

2007-10-30

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000, C257S401000

Reexamination Certificate

active

10738322

ABSTRACT:
A memory cell and a method of forming the same are described. The memory cell is formed on a substrate. The memory cell includes a floating gate that is formed at least in part within the substrate. A bit line region is formed within the substrate in proximity to the floating gate. Because of the configuration of the bit line and the floating gate, memory cells can be located closer to each other, increasing the density of memory cells in a memory array.

REFERENCES:
patent: 4053916 (1977-10-01), Cricchi et al.
patent: 4222063 (1980-09-01), Rodgers
patent: 4673962 (1987-06-01), Chatterjee et al.
patent: 5006909 (1991-04-01), Kosa
patent: 5102817 (1992-04-01), Chatterjee et al.
patent: 5103276 (1992-04-01), Shen et al.
patent: 5164917 (1992-11-01), Shichijo
patent: 5208657 (1993-05-01), Chatterjee et al.
patent: 5225697 (1993-07-01), Malhi et al.
patent: 5252845 (1993-10-01), Kim et al.
patent: 5300450 (1994-04-01), Shen et al.
patent: 5334548 (1994-08-01), Shen et al.
patent: 5883406 (1999-03-01), Nishizawa
patent: 5888864 (1999-03-01), Koh et al.
patent: 5939760 (1999-08-01), Batra et al.
patent: 6060739 (2000-05-01), Saitoh
patent: 6143610 (2000-11-01), Wen et al.
patent: 6246083 (2001-06-01), Noble
patent: 6300199 (2001-10-01), Reinberg
patent: 6426252 (2002-07-01), Radens
patent: 6506638 (2003-01-01), Yu
patent: 6518615 (2003-02-01), Geusic et al.
patent: 6521935 (2003-02-01), Krautschneider et al.
patent: 6531727 (2003-03-01), Forbes et al.
patent: 6537871 (2003-03-01), Forbes et al.
patent: 2003/0048656 (2003-03-01), Forbos
patent: 2003/0141538 (2003-07-01), Hayashi

Affiliated with

Also associated with

Rating

Flash memory with buried bit lines does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Flash memory with buried bit lines, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory with buried bit lines will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3892721