Flash memory with a trench common source line

Details Flash memory with a trench common source line Flash memory with a trench common source line

2005-06-15

2009-11-17

Phung, Anh (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29304

Reexamination Certificate

active

07619277

ABSTRACT:
A flash memory includes substrate, control gates, trenches, source regions, isolation structures, drain regions, a common source line, floating gates, tunneling dielectric layers, and dielectric layer. The control gates and the trenches are in first and second directions on the substrate, respectively. The source regions are in the substrate and trenches on one side of control gates. The isolation structures fill the trenches between the source regions. The drain regions are in the substrate on the other side of control gates between the isolation structures. The common source line is in the second direction inside the substrate and electrically connected to the source regions. Furthermore, the floating gates are between the control gates and the substrate that between the source and drain regions. The tunneling dielectric layers are disposed between the floating gates and the substrate, and the dielectric layer is disposed between the floating and control gates.

REFERENCES:
patent: 6525959 (2003-02-01), Fastow
patent: 6621119 (2003-09-01), Wu
patent: 7217964 (2007-05-01), Fastow et al.

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