Electrical computers and digital processing systems: memory – Storage accessing and control – Specific memory composition
Reexamination Certificate
2010-07-02
2011-11-29
Choe, Yong (Department: 2185)
Electrical computers and digital processing systems: memory
Storage accessing and control
Specific memory composition
C711SE12001, C711SE12008
Reexamination Certificate
active
08069302
ABSTRACT:
A flash memory storage system includes a memory array containing a plurality of memory cells and a controller for controlling the flash memory array. The controller dedicates a first group of memory cells to operate with a first number of bits per cell and a second, separate group of memory cells to operate with a second number of bits per cell. A mechanism is provided to apply wear leveling techniques separately to the two groups of cells to evenly wear out the memory cells.
REFERENCES:
patent: 5341339 (1994-08-01), Wells
patent: 5388083 (1995-02-01), Assar et al.
patent: 5568423 (1996-10-01), Jou et al.
patent: 5671388 (1997-09-01), Hasbun
patent: 5712819 (1998-01-01), Harari
patent: 5930167 (1999-07-01), Lee et al.
patent: 5963480 (1999-10-01), Harari
patent: 6230233 (2001-05-01), Lofgren et al.
patent: 6570790 (2003-05-01), Harari
patent: 6831865 (2004-12-01), Chang et al.
patent: 2005/0223158 (2005-10-01), See et al.
patent: 2006/0256623 (2006-11-01), Roohparvar
patent: 2007/0061502 (2007-03-01), Lasser et al.
EPO, “Office Communication,” corresponding European Patent Application No. 06796075.7, mailed on Apr. 1, 2009, 7 pages.
Korean Intellectual Property Office, “Notice of Grounds for Rejection,” corresponding Korean Patent Application No. 10-2008-7007413, mailed on Oct. 28, 2009, 4 pages (translation only.).
The Patent Office of the People's Republic of China, “Notification of the First Office Action,” corresponding Chinese Patent Application No. 200680032767.6, mailed on Feb. 26, 2010, 7 pages (translation only.).
Eyal Arik
Lasser Menahem
Murin Mark
Choe Yong
Davis , Wright, Tremaine, LLP
Sandisk IL Ltd
LandOfFree
Flash memory storage system and method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Flash memory storage system and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory storage system and method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4270422