Flash memory programming power reduction

Details Flash memory programming power reduction Flash memory programming power reduction

2011-06-07

2011-06-07

Hur, J. H. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S185110, C365S185180, C365S189110, C365S202000, C365S230030

Reexamination Certificate

active

07957204

ABSTRACT:
A non-volatile memory device includes an array of non-volatile memory cells. When programming the memory cells, a voltage supply source is used that includes multiple independent charge pumps. The independent charge pumps supply the programming voltage to different ones of bit lines in the array of memory cells. Using multiple charge pumps tends to reduce output voltage fluctuations and thereby reduce power loss.

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