Flash memory programming

Electrical computers and digital processing systems: memory – Storage accessing and control – Specific memory composition

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

07062599

ABSTRACT:
The various embodiments provide for programming floating-gate, or flash, memory devices by writing a block of data words to a volatile storage media from an external processor and programming the block of words to the nonvolatile flash memory cells from the volatile storage media without the need for further input from the external processor. In this manner, a block of words may be programmed into the flash memory device using a single write command and avoiding the need for a verify operation after programming each word. By utilizing an internal volatile storage media to receive the block of words prior to writing the individual words to the memory array, the external processor is free to perform other tasks while the programming and verification are performed autonomously by the memory device. Using an external power supply facilitates parallel transfer from the internal volatile storage media to the nonvolatile flash memory cells.

REFERENCES:
patent: 5539696 (1996-07-01), Patel
patent: 5579502 (1996-11-01), Konishi et al.
patent: 5745912 (1998-04-01), Konishi et al.
patent: 5781474 (1998-07-01), Sali et al.
patent: 6076138 (2000-06-01), Shin
patent: 6085282 (2000-07-01), Hansen et al.
patent: 6671785 (2003-12-01), Dalvi et al.
patent: 6839285 (2005-01-01), Zink et al.
patent: 2002/0126537 (2002-09-01), Kreifels et al.
Intel, Preliminary Datasheet, “3 Volt Intel StrataFlash Memory,” 28F128J3A, 28F640J3A, 28F320J3A (x8/x16) (Jun. 2000), copyright Intel Corporation, 1997-2000, pp. I-V, I-52.
Intel, Application Note, “5 Volt Intel StrataFlash Memory Design Guide,” AP-647, (Jul. 1999), copyright Intel Corporation, 1997, 1998, 1999, pp. 1-25.
Intel, Datasheet, 28F640L18, 28F128L18, 28F256L18, pp. 28-33, 73-75.
STMicroelectronics, Preliminary Data, “M58LW032D, 32 Mbit (4Mb x8, 2Mb x16, Uniform Block, 3V Supply Flash Memory,”(Dec. 2002) copyright 2002, STMicroelectronics, pp. 1-51.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Flash memory programming does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Flash memory programming, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory programming will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3683714

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.