Flash memory program and erase operations

Details Flash memory program and erase operations Flash memory program and erase operations

2005-08-30

2005-08-30

Wachsman, Hal (Department: 2857)

Data processing: measuring, calibrating, or testing

Measurement system in a specific environment

Electrical signal parameter measurement system

C702S136000, C702S183000, C702S189000, C257S213000, C257S299000, C327S146000, C327S147000, C365S185330

Reexamination Certificate

active

06937948

ABSTRACT:
A flash memory device includes a charge pump having a capacity that is preset to a particular value. The flash memory device includes a measuring circuit to measure the actual capacity of the charge pump and to reset the capacity of the charge pump to a value based on the measured capacity.

REFERENCES:
patent: 5978275 (1999-11-01), Song et al.
patent: 6111787 (2000-08-01), Akaogi et al.
patent: 6381670 (2002-04-01), Lee et al.
Lin et al., A New 4 Phase Charge Pump Without Body Effects For Low Supply Voltages, Jan. 1994, NCHU, pp. 1-4.
Kawahara et al., Internal Voltage Generator for Low Voltage Quarter-Micrometer Flash Memories, Jan. 1998, IEEE, vol.: 33, pp. 126-132.
Tanzawa et al., A Stable Programming Pulse Generator for Single Power Supply Flash Memories, Jun. 1997, IEEE, vol.: 32, pp. 845-851.

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